Diodes Incorporated ZXMN10A11GTA
- ZXMN10A11GTA
- Diodes Incorporated
- MOSFET N-CH 100V 1.7A SOT223
- Transistors - FETs, MOSFETs - Single
- ZXMN10A11GTA Scheda dati
- TO-261-4, TO-261AA
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 3066
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number ZXMN10A11GTA |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Diodes Incorporated |
Description MOSFET N-CH 100V 1.7A SOT223 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-261-4, TO-261AA |
Supplier Device Package SOT-223-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) |
Rds On (Max) @ Id, Vgs 350mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 5.4 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 274 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-261-4, TO-261AA |
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Diodes Incorporated
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