TK32A12N1,S4X

Toshiba Semiconductor and Storage TK32A12N1,S4X

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  • TK32A12N1,S4X
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 120V 32A TO220SIS
  • Transistors - FETs, MOSFETs - Single
  • TK32A12N1,S4X Scheda dati
  • TO-220-3 Full Pack
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 23095
  • Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
  • 1 anno di garanzia della qualità 》
  • Clicca per ottenere le tariffe
Part Number
TK32A12N1,S4X
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 120V 32A TO220SIS
Package
Tube
Series
U-MOSVIII-H
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220SIS
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
30W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Rds On (Max) @ Id, Vgs
13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 60 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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