Vishay Siliconix SI4866BDY-T1-GE3
- SI4866BDY-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 12V 21.5A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4866BDY-T1-GE3 Scheda dati
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1995
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number SI4866BDY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 12V 21.5A 8SO |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 12 V |
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc) |
Rds On (Max) @ Id, Vgs 5.3mOhm @ 12A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 5020 pF @ 6 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
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Vishay Siliconix
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