Vishay Siliconix SI4666DY-T1-GE3
- SI4666DY-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 25V 16.5A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4666DY-T1-GE3 Scheda dati
- 8-SOIC (0.154\", 3.90mm Width)
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 4188
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number SI4666DY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 25V 16.5A 8SO |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 5W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 25 V |
Current - Continuous Drain (Id) @ 25°C 16.5A (Tc) |
Rds On (Max) @ Id, Vgs 10mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1145 pF @ 10 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
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Vishay Siliconix
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