Toshiba Semiconductor and Storage RN1965FE(TE85L,F)
- RN1965FE(TE85L,F)
- Toshiba Semiconductor and Storage
- TRANS 2PNP PREBIAS 0.1W ES6
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RN1965FE(TE85L,F) Scheda dati
- SOT-563, SOT-666
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 18228
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number RN1965FE(TE85L,F) |
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS 2PNP PREBIAS 0.1W ES6 |
Package Cut Tape (CT) |
Series - |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package ES6 |
Power - Max 100mW |
Transistor Type 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V |
Frequency - Transition 250MHz |
Resistor - Base (R1) 2.2kOhms |
Resistor - Emitter Base (R2) 47kOhms |
Package_case SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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