IXYS IXFT12N100
- IXFT12N100
- IXYS
- MOSFET N-CH 1000V 12A TO268
- Transistors - FETs, MOSFETs - Single
- IXFT12N100 Scheda dati
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
- Lead free / RoHS Compliant
- 26111
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number IXFT12N100 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 1000V 12A TO268 |
Package Tube |
Series HiPerFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package TO-268AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1000 V |
Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS
IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a ...
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