IXYS IXFN200N10P
- IXFN200N10P
- IXYS
- MOSFET N-CH 100V 200A SOT-227B
- Transistors - FETs, MOSFETs - Single
- IXFN200N10P Scheda dati
- SOT-227-4, miniBLOC
- Tube
-
Lead free / RoHS Compliant
- 11848
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number IXFN200N10P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 100V 200A SOT-227B |
Package Tube |
Series Polar™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SOT-227-4, miniBLOC |
Supplier Device Package SOT-227B |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 680W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 200A (Tc) |
Rds On (Max) @ Id, Vgs 7.5mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case SOT-227-4, miniBLOC |
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IXYS
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