Vishay Siliconix IRFIBE30GPBF
- IRFIBE30GPBF
- Vishay Siliconix
- MOSFET N-CH 800V 2.1A TO220-3
- Transistors - FETs, MOSFETs - Single
- IRFIBE30GPBF Scheda dati
- TO-220-3 Full Pack, Isolated Tab
- Tube
- Lead free / RoHS Compliant
- 18270
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number IRFIBE30GPBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 800V 2.1A TO220-3 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 35W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 800 V |
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) |
Rds On (Max) @ Id, Vgs 3Ohm @ 1.3A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix
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