Microsemi Corporation APT1002RBNG
- APT1002RBNG
- Microsemi Corporation
- MOSFET N-CH 1000V 8A TO247AD
- Transistors - FETs, MOSFETs - Single
- APT1002RBNG Scheda dati
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 21352
- Inventario spot/distributori autorizzati/inventario eccedente di fabbrica
- 1 anno di garanzia della qualità 》
- Clicca per ottenere le tariffe
Part Number APT1002RBNG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Microsemi Corporation |
Description MOSFET N-CH 1000V 8A TO247AD |
Package Tube |
Series POWER MOS IV® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247AD |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 240W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1000 V |
Current - Continuous Drain (Id) @ 25°C 8A (Tc) |
Rds On (Max) @ Id, Vgs 1.6Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
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Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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